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Application of sintering technology in semiconductors

The semiconductor sintering process is an important semiconductor manufacturing process. It is a process in which powdered semiconductor materials are sintered into bulk semiconductor materials at high temperatures. This process can increase the density and crystallinity of semiconductor materials, thereby improving their electrical and mechanical properties, making them more suitable for the manufacture of electronic devices.

The basic principle of the semiconductor sintering process is to put powdered semiconductor materials into a vacuum sintering furnace and sinter them into bulk semiconductor materials by heating. During the sintering process, the particles of the semiconductor material bond together to form larger grains, thus increasing the density and crystallinity of the material. At the same time, the repair of lattice defects and the diffusion of impurities also occur during the sintering process, thereby further improving the electrical and mechanical properties of the material.

The specific steps of the semiconductor sintering process include: material preparation, pre-sintering treatment, sintering process control and post-sintering treatment. Material preparation refers to making semiconductor materials into powder form, usually by mechanical grinding or chemical synthesis. Pre-sintering treatment includes steps such as cleaning, drying and pressing to ensure the purity and uniformity of the material. The control of the sintering process includes the control of parameters such as temperature, pressure, atmosphere and time to ensure the stability and consistency of the sintering process. Post-sintering processing includes steps such as cooling, cutting and polishing to obtain semiconductor materials that meet the requirements.

The semiconductor sintering process is widely used in semiconductor device manufacturing, such as manufacturing transistors, diodes, solar cells, etc. It can improve the performance and stability of semiconductor materials, thereby improving device performance and reliability. At the same time, the semiconductor sintering process can also achieve large-scale production, reduce manufacturing costs, and promote the development of the semiconductor industry.

The semiconductor sintering process is an important semiconductor manufacturing process. It can increase the density and crystallinity of semiconductor materials, thereby improving their electrical and mechanical properties, making them more suitable for the manufacture of electronic devices. With the continuous development of semiconductor technology, the semiconductor sintering process will be more widely used and developed.

Traditional power semiconductor devices represented by Si and GaAs are widely used in computers, communications, consumer electronics, automotive electronics and other industries. However, they are approaching their physical limits in terms of power processing, maximum frequency and operating temperature, and cannot adapt to industry trends. The development direction requirements of high frequency, high temperature, high power and resistance to harsh environments, such as Si-based devices operating above 200°C, will lead to an increase in internal temperature due to self-heating. Compared with traditional power semiconductor devices, the third generation power semiconductor devices represented by SiC and GaN have a larger bandgap and higher breakdown voltage, and can work in harsh environments, thus becoming the key to power semiconductor devices. Sex technology. The harsh application environment also places higher requirements on packaging interconnect materials, such as superior thermal conductivity, high temperature resistance, high mechanical properties and high reliability.
The packaging interconnect materials used in third-generation power semiconductor devices mainly include nano-silver paste and nano-copper paste. Due to the size effect, nanomaterials have lower melting points and larger specific surface areas than bulk materials, and are more active in the interconnection process. This suggests that nanoscale interconnections are promising at low temperatures.

A large number of studies have shown that nano-copper particles and nano-silver particles can be sintered at low temperatures. After sintering, they have a melting point similar to that of bulk metal, and meet the requirements of “low-temperature molding and high-temperature service”. Copper material has similar electrical conductivity and thermal conductivity to silver material, has lower cost, and is not prone to electromigration, so it has been favored by researchers.
Low-temperature sintering technology takes advantage of the low-temperature molding properties of nano-copper particles. After sintering, the nano-copper interconnect layer forms a network interconnection structure, and effective interconnection is formed between the nano-copper and the substrate through metal diffusion. The parameter selection of the sintering process has an important impact on the sintering performance of the interconnect joint. The existing process usually adds flux to the copper paste and assists sintering at high pressure and high temperature to improve the sintering performance of the interconnect joint.